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PC817B

Description

The 817 series of devices each consist of an infrared

emitting diodes, optically coupled to a phototransistor detector

encapsulated with green compound.The devices are in a 4-pin

DIP package and available in wide-lead spacing and SMD option.


Features

◆  Current transfer ratio(CTR: 50~600% at IF =5mA, VCE =5V)

◆  High isolation voltage between inputand output (Viso=5000 V rms )

◆  Creepage distance >7.62 mm.

◆  Operating temperature up to +110℃

◆  Compact small outline package

◆  Pb free and RoHS compliant. 

 

Applications

◆  Programmable controllers.

◆  System appliances, measuring instruments.

◆  Telecommunication equipments.

◆  Home appliances, such as fan heaters, etc.

◆  Signal transmission between circuits of different potentials and impedances.


Absolute maximum ratings (Ta=25℃)

Parameter

Symbol

Rating

Unit

Input

Forward current

IF

50

mA

Reverse voltage

VR

6

V

Power dissipation

Derating factor (above Ta = 100)

PD

70

mW

2.9

mW/

Output

Power dissipation 150 mW

Derating factor (above Ta = 100)

PC

150

mW

5.8

mW/

Collector current

IC

50

mA

Collector-Emitter voltage

VCEO

35

V

Emitter-Collector voltage

VECO

6

V

Total power dissipation

PTOT

200

mW

Isolation voltage *1

VISO

5000

V rms

Operating temperature

Topr

-40~+110

Storage temperature

Tstg

-55~+125

Soldering temperature *2

Tsol

260

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